f eatures ? high current transfer ratio (ctr: min. 100% at i f = 10 ma, v ce = 10 v) ? response time (t r : typ., 3 s at v ce = 10 v, i c = 2 ma, r l = 100 ? ) ? input-output isolation voltage (v iso = 3550 vrms) ? dual-in-line package ? ul approved ? csa approved ? iec/en/din en 60747-5-2 approved ? options available: C leads with 0.4" (10.16 mm) spacing (w00) C leads bends for surface mounting (300) C tape and reel for smd (500) C iec/en/din en 60747-5-2 approvals (060) description the 4N35 is an optocoupler for general purpose applica - tions. it contains a light emitting diode optically coupled to a photo-transistor. it is packaged in a 6-pin dip pack - age and available in wide-lead spacing option and lead bend smd option. response time, t r , is typically 3 s and minimum ctr is 100% at input current of 10 ma. applications ? i/o interfaces for computers ? system appliances, measuring instruments ? signal transmission between circuits of diferent potentials and impedances functional diagram schematic caution: it is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by esd. 4N35 phototransistor optocoupler general purpose type data sheet lead (pb) free rohs 6 fully compliant rohs 6 fully compliant options available; -xxxe denotes a lead-free product 6 5 4 1 2 3 pin no. and internal connection diagram 1. anode 2. cathode 3. nc 4. emitter 5. collector 6. base 1 2 anode cathode v f + ? i f 6 5 4 base collector emitter i c
2 ordering information 4N35-xxxx is ul recognized with 3550 vrms for 1 minute per ul1577 and is approved under csa component ac - ceptance notice #5, file ca 88324. rohs component option part rank '0' surface gull tape iec/en/din number 100%4N35 -060e 300 mil dip-6 x 65 pcs per tube -360e 300 mil dip-6 x x x 65 pcs per tube -560e 300 mil dip-6 x x x x 1000 pcs per reel -w00e 400 mil dip-6 65 pcs per tube -w60e 400 mil dip-6 x 65 pcs per tube to order, choose a part number from the part number column and combine with the desired option from the op - tion column to form an order entry. example 1: 4N35-360e to order product of 300 mil dip-6 dc gull wing surface mount package in tube packaging with 100%4N35-w00e to order product of 400 mil dip-6 dc package in tube packaging with 100% 3 package outline drawings 4N35-060e 4N35-w00e 4N35-300e y y w w 6.5 0.5 (0.256) 3.5 0.5 (0.138) 3.3 0.5 (0.13) 0.5 typ. (0.02) 0.5 0.1 (0.02) 2.54 0.25 (0.1) 2.8 0.5 (0.110) 7.3 0.5 (0.287) 7.62 0.3 (0.3) 0.26 (0.010) 7.62 ~ 9.98 lead free anode date code a 4N35 v dimensions in millimeters and (inches) y y w w 6.5 0.5 (0.256) 3.5 0.5 (0.138) 0.5 0.1 (0.02) 2.54 0.25 (0.1) 2.8 0.5 (0.110) 7.3 0.5 (0.287) 7.62 0.3 (0.3) 0.26 (0.010) 10.16 0.5 (0.4) lead free anode date code a 4N35 6.9 0.5 (0.272) 2.3 0.5 (0.09) dimensions in millimeters and (inches) 1.2 0.1 (0.047) 2.54 0.25 (0.1) 7.3 0.5 (0.287) 7.62 0.3 (0.3) 0.26 (0.010) 10.16 0.3 (0.4) 1.0 0.25 (0.39) date code y y w w 6.5 0.5 (0.256) lead free anode a 4N35 3.5 0.5 (0.138) 0.35 0.25 (0.014) dimensions in millimeters and (inches) 4N35-000e y y w w 6.5 0.5 (0.256) 3.5 0.5 (0.138) 3.3 0.5 (0.13) 0.5 typ. (0.02) 0.5 0.1 (0.02) 2.54 0.25 (0.1) 2.8 0.5 (0.110) 7.3 0.5 (0.287) 7.62 0.3 (0.3) 0.26 (0.010) 7.62 ~ 9.98 lead free anode date code a 4N35 dimensions in millimeters and (inches)
4 absolute maximum ratings storage temperature, t s C55?c to +150?c operating temperature, t a C55?c to +100?c lead solder temperature, max. 260?c for 10 s (1.6 mm below seating plane) average forward current, i f 60 ma reverse input voltage, v r 6 v input power dissipation, p i 100 mw collector current, i c 100 ma collector-emitter voltage, v ceo 30 v emitter-collector voltage, v eco 7 v collector-base voltage, v cbo 70 v collector power dissipation 300 mw total power dissipation 350 mw isolation voltage, v iso 3550 vrms (ac for 1 minute, r.h. = 40 ~ 60%) 30 seconds 60 ~ 150 sec 90 sec 60 sec 60 sec 25 c 150 c 200 c 250 c 260 c (peak temperature) 217 c time (sec) temperature ( c) solder refow temperature profle 1) one-time soldering refow is recommended within the condition of temperature and time profle shown at right. 2) when using another soldering method such as in - frared ray lamp, the temperature may rise partially in the mold of the device. keep the temperature on the package of the device within the condition of (1) above. note: non-halide fux should be used.
figure 1. forward current vs. temperature. figure 2. collector power dissipation vs. temperature. figure 3. forward current vs. forward voltage. i f ? forward current ? ma 0 t a ? ambient temperature ? c -25 75 125 60 25 20 40 100 0 5 0 100 -55 80 4N35 fig 1 p c ? collector power dissipation ? mw 0 t a ? ambient temperature ? c -25 75 125 200 25 100 400 0 5 0 100 -55 300 4N35 fig 2 i f ? forward current ? ma 1 v f ? forward voltage ? v 2.0 3.0 10 5 500 1.0 0 4N35 fig 3 t a = 75c 0.5 1.5 2.5 2 20 50 100 200 t a = 50c t a = 25c t a = 0c t a = -25c * ctr = x 100% i c i f electrical specifcations (t a = 25?c) parameter symbol min. typ. max. units test conditions forward voltage v f C 1.2 1.5 v i f = 10 ma reverse current i r C C 10 a v r = 4 v terminal capacitance c t C 50 C pf v = 0, f = 1 khz collector dark current i ceo C C 50 na v ce = 10 v, i f = 0, t a = 25 ? c C C 500 a v ce = 30 v, i f = 0, t a = 100 ? c collector-emitter breakdown voltage bv ceo 30 C v i c = 0.1 ma, i f = 0 emitter-collector breakdown voltage bv eco 7 C C v i e = 10 a, i f = 0 collector-base breakdown voltage bv cbo 70 C C v i c = 0.1 ma, i f = 0 collector current i c 10 C C ma i f = 10 ma *current transfer ratio ctr 100 C C % v ce = 10 v collector-emitter saturation voltage v ce(sat) C C 0.3 v i f = 50 ma, i c = 2 ma response time (rise) t r C 3 10 s v cc = 10 v, i c = 2 ma response time (fall) t f C 3 10 s r l = 100 ? isolation resistance r iso 5 x 10 10 1 x 10 11 C ? dc 500 v 40 ~ 60% r.h. floating capacitance c f C 1 2.5 pf v = 0, f = 1 mhz
6 figure 4. current transfer ratio vs. forward current. figure 5. collector current vs. collector-emitter volt - age. figure 6. relative current transfer ratio vs. tempera - ture. figure 7. collector-emitter saturation voltage vs. temperature. figure 8. collector dark current vs. temperature. figure 9. response time vs. load resistance. i c ? collector current ? ma 0 v ce ? collector-emitter voltage ? v 10 15 20 10 30 5 0 4N35 fig 5 p c (max.) t a = 25c i f = 15 ma i f = 10 ma i f = 5 ma i f = 2 ma relative current transfer ratio ? % 0 100 50 150 4N35 fig 6 v ce = 10 v i f = 10 ma t a ? ambient temperature ? c -25 75 25 0 5 0 100 -55 v ce(sat.) ? collector-emitter saturation voltage ? v 0 t a ? ambient temperature ? c -25 75 25 0.04 0.12 0 5 0 100 -55 0.08 4N35 fig 7 0.02 0.06 0.10 i c = 2 ma i f = 50 ma response time ? s 0.1 r l ? load resistance ? k ? 0.1 5 1 0.5 0.2 0.5 100 0.2 2 1 0 0.05 2 4N35 fig 9 20 50 v ce = 10 v i c = 2 ma t a = 25c tf tr 1 5 10 20 50 200 td ts i ce o ? collector dark current ? a 10 -13 -25 80 125 40 20 60 100 -55 4N35 fig 8 t a ? ambient temperature ? c v ce = 10 v 10 -12 10 -11 10 -10 10 -9 10 -8 10 -7 10 -6 5 5 5 5 5 5 5 ctr ? current transfer ratio ? % 0 i f ? forward current ? ma 0.2 5 100 100 1 20 60 180 0.5 2 1 0 0.1 140 4N35 fig 4 v ce = 10 v t a = 25c 20 50 500 k ? 100 k ? 40 80 120 160 r be = figure 11. collector-emitter saturation voltage vs. forward current. figure 10. frequency response. voltage gain av ? db -20 f ? frequency ? khz 1 2 0 500 -5 5 -15 -10 5 2 1 0 5 0 0.5 0 4N35 fig 10 100 200 r l = 10 k ? v ce = 5 v i c = 2 ma t a = 25c r l = 1 k ? r l = 100 ? 0 i f ? forward current ? ma 10 15 2 7 5 0 4N35 fig 11 1 3 4 5 6 v ce(sat.) ? collector-emitter saturation voltage ? v t a = 25c i c = 0.5 ma i c = 1 ma i c = 2 ma i c = 3 ma i c = 6 ma i c = 7 ma
7 4N35 test circuit 1 v cc r d input r l output input output 10% 90% t t t t d f s r test circuit for response time test circuit for frequency response 4N35 test circuit 1 v cc r d r l output ~ for product information and a complete list of distributors, please go to our website: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies limited in the united states and other countries. data subject to change. copyright ? 2007 avago technologies limited. all rights reserved. obsoletes av01-0537en av02-0773en - october 18, 2007
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